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III-V nanowire synthesis by use of electrodeposited gold particles
Division of Solid State Physics/Nanometer Structure Consortium, Lund University, Lund, Sweden.
Division of Solid State Physics/Nanometer Structure Consortium, Lund University, Lund, Sweden.
Högskolan i Halmstad, Akademin för informationsteknologi, Halmstad Embedded and Intelligent Systems Research (EIS). Division of Solid State Physics/Nanometer Structure Consortium, Lund University, Lund, Sweden.ORCID-id: 0000-0001-5993-8106
Division of Solid State Physics/Nanometer Structure Consortium, Lund University, Lund, Sweden.
Vise andre og tillknytning
2015 (engelsk)Inngår i: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 15, nr 1, s. 134-138Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Semiconductor nanowires are great candidates for building novel electronic devices. Considering the cost of fabricating such devices, substrate reuse and gold consumption are the main concerns. Here we report on implementation of high throughput gold electrodeposition for selective deposition of metal seed particles in arrays defined by lithography for nanowire synthesis. By use of this method, a reduction in gold consumption by a factor of at least 300 was achieved, as compared to conventional thermal evaporation for the same pattern. Because this method also facilitates substrate reuse, a significantly reduced cost of the final device is expected. We investigate the morphology, crystallography, and optical properties of InP and GaAs nanowires grown from electrodeposited gold seed particles and compare them with the properties of nanowires grown from seed particles defined by thermal evaporation of gold. We find that nanowire synthesis, as well as the material properties of the grown nanowires are comparable and quite independent of the gold deposition technique. On the basis of these results, electrodeposition is proposed as a key technology for large-scale fabrication of nanowire-based devices.

sted, utgiver, år, opplag, sider
Washington, DC: American Chemical Society (ACS), 2015. Vol. 15, nr 1, s. 134-138
Emneord [en]
Gold electrodeposition, catalyst particles, nanoimprint lithography, crystal phase, nanowires
HSV kategori
Identifikatorer
URN: urn:nbn:se:hh:diva-27513DOI: 10.1021/nl503203zISI: 000348086100022PubMedID: 25435082Scopus ID: 2-s2.0-84921063502OAI: oai:DiVA.org:hh-27513DiVA, id: diva2:781781
Tilgjengelig fra: 2015-01-19 Laget: 2015-01-19 Sist oppdatert: 2018-04-25bibliografisk kontrollert
Inngår i avhandling
1. Gold Electrodeposition in Semiconductor Nanowire Technology
Åpne denne publikasjonen i ny fane eller vindu >>Gold Electrodeposition in Semiconductor Nanowire Technology
2017 (engelsk)Licentiatavhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Semiconductor nanowires are widely considered as promising candidates for next generations of electronics and optoelectronics. Gold seed particles have so far been recognized as the most important catalyst for growth of nanowires. Costs related to substrates, lithography processes and gold consumption most strongly influence the final cost of nanowire-based devices. An optimum gold deposition process can facilitate re-use of substrates, avoid repetitive lithogra-phy processes and reduce the gold consumption in order to reduce the cost of the final device. In this work, we report on nanowire seed definition by gold electrodeposition. Electron microscopy inspection and optical spectroscopy confirm that the subsequently grown III-V nanowires have surface morphology and crystal quality comparable to those of nanowires grown from seed particles defined by conventional thermal evaporation. For seeding of substrates used in a typical growth run, we used around 650 times less gold with a 10 times higher throughput as compared to thermal evaporation. Using selective gold electrodeposition, we demonstrated redeposition of seed particles on a substrate after nanowire peel-off in order to reuse it for multiple growth runs. We also demonstrated the possibility of depositing seed particles in deep holes etched in thick masks to facilitate template-assisted growth of nanowires on (001) substrates.

sted, utgiver, år, opplag, sider
Lund: Lund University, 2017. s. 64
HSV kategori
Identifikatorer
urn:nbn:se:hh:diva-36680 (URN)
Presentation
2017-12-01, Q179 ("k-space"), Fysicum, LTH, Professorsgatan 1, Lund, 10:15 (engelsk)
Opponent
Veileder
Tilgjengelig fra: 2018-05-03 Laget: 2018-04-25 Sist oppdatert: 2018-05-03bibliografisk kontrollert

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