Light-emitting nano-porous silicon structures fabricated using a plasma hydrogenation techniqueShow others and affiliations
2005 (English)In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, ISSN 0921-5107, Vol. 124-125, no SUPPL., p. 483-487Article in journal (Refereed) Published
Abstract [en]
The preparation of porous silicon films by DC-plasma hydrogenation and subsequent annealing of amorphous silicon films on silicon and glass substrates is reported for the first time. The effects of varying plasma power and annealing temperatures have been investigated and characterized by scanning-electron microscopy, transmission-electron microscopy, and photoluminescence. A plasma density of about 5.5 W/m2 and hydrogenation-annealing temperatures of about 400 °C was found to be suitable for the formation of nano-crystalline silicon films with grain diameters of the order of 3-10 nm. The intensity and wavelength of the emitted visible light were found to depend on the hydrogenation and annealing conditions, and patterning of the silicon films using standard lithography allowed the creation of light-emitting patterns.
Place, publisher, year, edition, pages
2005. Vol. 124-125, no SUPPL., p. 483-487
Keywords [en]
Hydrogenation, Nano-pores, Photoluminescence, Porous silicon, Amorphous silicon, Annealing, Glass, Light emitting diodes, Metallic films, Photolithography, Plasma applications, Scanning electron microscopy, Transmission electron microscopy, Plasma hydrogenation technique, Plasma power, Silicon films
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-156478DOI: 10.1016/j.mseb.2005.08.090ISI: 000233895800101Scopus ID: 2-s2.0-27844439353OAI: oai:DiVA.org:kth-156478DiVA, id: diva2:768509
Note
QC 20141204
2014-12-042014-11-282024-01-08Bibliographically approved