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Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors
Politecnico di Milano, Como Campus, Italy. (Department of Electronic Engineering and Information Science)
Politecnico di Milano, Como Campus, Italy. (Department of Electronic Engineering and Information Science)
Modena and Reggio Emilia University, Italy. (Department of Physics)
University of Catania, Italy. (Department of Physics)
Vise andre og tillknytning
2009 (engelsk)Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 615-617, s. 845-848Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The design and the experimental results of some prototypes of SiC X-ray detectors are presented. The devices have been manufactured on top of 2 inch 4H-SiC wafer with 115 μm thick undoped high purity epitaxial layer, which constitutes the detection’s active volume. Pad and pixel detectors based on Ni-Schottky junctions have been tested. The residual doping of the epi-layer was found tobe extremely low, 3.7 x 1013 cm-3, allowing to achieve the highest detection efficiency and the lower specific capacitance of the detectors. At 22 °C and in operating bias condition, the reverse current densities of the detector’s Schottky junctions have been measured to be between J = 0.3 pA/cm2 and J = 4 pA/cm2; these values are more than two orders of magnitude lower than those of state of the art silicon detectors. With such low leakage currents, the equivalent electronic noise of SiC pixel detectors is as low as 0.5 electrons r.m.s at room temperature, which represents a new state of the art in the scenario of semiconductor radiation detectors.

sted, utgiver, år, opplag, sider
Trans Tech Publications Inc., 2009. Vol. 615-617, s. 845-848
Emneord [en]
Silicon carbide, Radiation detectors, X-ray spectroscopy
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-109931DOI: 10.4028/www.scientific.net/MSF.615-617.845OAI: oai:DiVA.org:liu-109931DiVA, id: diva2:741668
Tilgjengelig fra: 2014-08-28 Laget: 2014-08-28 Sist oppdatert: 2017-12-05

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