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X-γ Ray Spectroscopy With Semi-Insulating 4H-Silicon Carbide
Politecnico di Milano, Como Campus, Italy. (Department of Electronic Engineering and Information Science)
Politecnico di Milano, Como Campus, Italy. (Department of Electronic Engineering and Information Science)
University of Milano, Italy.
Selex Sistemi Integrati S.p.A., Rome, Italy.
2013 (engelsk)Inngår i: IEEE Transactions on Nuclear Science, ISSN 0018-9499, E-ISSN 1558-1578, Vol. 60, nr 2, s. 1436-1441Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Radiation detectors on a semi-insulating (SI) 4H siliconcarbide (SiC) wafer have been manufactured and characterizedwith X and photons in the range 8–59 keV. The detectors were 400 μm diameter circular Ni-SiC junctions on an SI 4H-SiC wafer thinned to 70 μm. Dark current densities of 3.5 nA/cm2 at 20 °C and 0.3 μA/cm2 at 104 °C with an internal electric field of 7 kV/cm have been measured. X-γ ray spectra from 241Am have been acquired at room temperature with pulser line width of 756 eV FWHM. The charge collection efficiency (CCE) has been measured under different experimental conditions with a maximum CCE = 75 % at room temperature. Polarization effects have been observed, and the dependence of CCE on time and temperature has been measured and analyzed. The charge trapping has been described by the Hecht model with a maximum totalmean drift length of 107 μm at room temperature.

sted, utgiver, år, opplag, sider
IEEE , 2013. Vol. 60, nr 2, s. 1436-1441
Emneord [en]
Charge collection efficiency (CCE), Polarization effect, Radiation detectors, Semiconductor detectors, Semi-insulating (SI) crystals, Silicon carbide (SiC), X-ray spectroscopy
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Identifikatorer
URN: urn:nbn:se:liu:diva-109916DOI: 10.1109/TNS.2013.2252019OAI: oai:DiVA.org:liu-109916DiVA, id: diva2:741619
Tilgjengelig fra: 2014-08-28 Laget: 2014-08-28 Sist oppdatert: 2017-12-05bibliografisk kontrollert

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