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Magnetic Polarons and Large Negative Magnetoresistance in GaAs Nanowires implanted with Mn Ions
Solid State Physics/The Nanometer Structure Consortium, Lund University, Lund, Sweden.
Solid State Physics/The Nanometer Structure Consortium, Lund University, Lund, Sweden.
Institute for Solid State Physics, Jena University, Jena, Germany.
Solid State Physics/The Nanometer Structure Consortium, Lund University, Lund, Sweden.
Vise andre og tillknytning
2013 (engelsk)Inngår i: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 13, nr 11, s. 5079-5084Artikkel i tidsskrift, Letter (Fagfellevurdert) Published
Abstract [en]

We report on low-temperature magnetotransport and SQUID measurements on heavily doped Mn-implanted GaAs nanowires. SQUID data recorded at low magnetic fields exhibit clear signs of the onset of a spin-glass phase with a transition temperature of about 16 K. Magnetotransport experiments reveal a corresponding peak in resistance at 16 K and a large negative magnetoresistance, reaching 40% at 1.6 K and 8 T. The negative magnetoresistance decreases at elevated temperatures and vanishes at about 100 K. We interpret our transport data in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins, forming a paramagnetic/spin-glass phase. Copyright © 2013 American Chemical Society

sted, utgiver, år, opplag, sider
Washington, United States: American Chemical Society (ACS), 2013. Vol. 13, nr 11, s. 5079-5084
Emneord [en]
Nanospintronics, Ion-implantation, GaMnAs, Nanowires, hopping transport, Negative magnetoresistance
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Identifikatorer
URN: urn:nbn:se:hh:diva-25041DOI: 10.1021/nl402229rISI: 000327111700014PubMedID: 24093475Scopus ID: 2-s2.0-84887830532OAI: oai:DiVA.org:hh-25041DiVA, id: diva2:712143
Forskningsfinansiär
Swedish Foundation for Strategic Research Tilgjengelig fra: 2014-04-14 Laget: 2014-04-14 Sist oppdatert: 2018-04-03bibliografisk kontrollert

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