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Influence of a Changing Gate Bias on the Sensing Properties of SiC Field Effect Gas Sensors
Saarland University, Saarbrücken, Germany. (Laboratory for Measurement Technology)
Saarland University, Saarbrücken,, Germany. (Laboratory for Measurement Technology)
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska högskolan.
Saarland University, Saarbrücken, Germany. (Laboratory for Measurement Technology)
Vise andre og tillknytning
2012 (engelsk)Inngår i: IMCS 2012, 2012, s. 140-143Konferansepaper, Publicerat paper (Annet vitenskapelig)
Abstract [en]

Field effect transistors based on silicon carbide have previously been used with temperature cycled operation to enhance the selectivity. In this study the influence of a changing gate bias on the sensing properties of a platinum gate FET has been studied in order to extend the virtual multi-sensor approach. The sensor exhibits gas specific hysteresis when changing the gate bias indicating that additional information regarding selectivity is contained in the transient behavior. Measurements also showed that especially the shape of the sensor signal changes dramatically with different gas exposures (e.g. H2, CO or NH3) during relaxation after step changes of the gate bias. The changing shape primarily reflects the gas itself and not the concentration so that the selectivity of the sensor is increased.

sted, utgiver, år, opplag, sider
2012. s. 140-143
Emneord [en]
Changing gate bias, MISiC FET, gas specific hysteresis, transient behavior
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-92402DOI: 10.5162/IMCS2012/1.5.4ISBN: 978-3-9813484-2-2 (tryckt)OAI: oai:DiVA.org:liu-92402DiVA, id: diva2:620739
Konferanse
14th International Meeting on Chemical Sensors (IMCS 2012), 20-23 May 2012, Nürnberg, Germany
Tilgjengelig fra: 2013-05-10 Laget: 2013-05-10 Sist oppdatert: 2014-01-09bibliografisk kontrollert

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