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A New Route toward Semiconductor Nanospintronics: Highly Mn-Doped GaAs Nanowires Realized by Ion-Implantation under Dynamic Annealing Conditions
Institute for Solid State Physics, Jena University, Max-Wien-Platz 1, 07743 Jena, Germany.
Avd. f. Fasta tillståndets fysik, Lunds Universitet. (Nanometerkonsortiet)
Avd. f. Fasta tillståndets fysik, Lunds Universitet. (Nanometerkonsortiet)
Avd. f. Fasta tillståndets fysik, Lunds Universitet / Tillämpad matematik och fysik (MPE-lab), MPE-lab. (Nanometerkonsortiet)
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2011 (engelsk)Inngår i: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 11, nr 9, s. 3935-3940Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We report on highly Mn-doped GaAs nanowires (NWs) of high crystalline quality fabricated by ion beam implantation, a technique that allows doping concentrations beyond the equilibrium solubility limit. We studied two approaches for the preparation of Mn-doped GaAs NWs: First, ion implantation at room temperature with subsequent annealing resulted in polycrystalline NWs and phase segregation of MnAs and GaAs. The second approach was ion implantation at elevated temperatures. In this case, the single-crystallinity of the GaAs NWs was maintained, and crystalline, highly Mn-doped GaAs NWs were obtained. The electrical resistance of such NWs dropped with increasing temperature (activation energy about 70 meV). Corresponding magnetoresistance measurements showed a decrease at low temperatures, indicating paramagnetism. Our findings suggest possibilities for future applications where dense arrays of GaMnAs nanowires may be used as a new kind of magnetic material system.

sted, utgiver, år, opplag, sider
Washington: American Chemical Society (ACS), 2011. Vol. 11, nr 9, s. 3935-3940
Emneord [en]
DMS, doping, dynamic annealing, GaAs, GaMnAs, ion-implantation, Nanospintronics, Nanowires
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Identifikatorer
URN: urn:nbn:se:hh:diva-16458DOI: 10.1021/nl2021653ISI: 000294790200073PubMedID: 21848314Scopus ID: 2-s2.0-80052786045OAI: oai:DiVA.org:hh-16458DiVA, id: diva2:448313
Tilgjengelig fra: 2011-10-15 Laget: 2011-10-15 Sist oppdatert: 2018-04-03bibliografisk kontrollert

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