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Optical pumping as artificial doping in quantum dots-in-a-well infrared photodetectors
Acreo AB.
Linköping University.
Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), Halmstad Embedded and Intelligent Systems Research (EIS), Tillämpad matematik och fysik (CAMP).ORCID-id: 0000-0001-5027-1456
IRnova.
Vise andre og tillknytning
2009 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 94, nr 5, s. 053503-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Resonant optical pumping across the band gap was used as artificial doping in InAs/In0.15Ga0.85As/GaAs quantum dots-in-a-well infrared photodetectors. A selective increase in the electron population in the different quantum dot energy levels enabled the low temperature photocurrent peaks observed at 120 and 148 meV to be identified as intersubband transitions emanating from the quantum dot ground state and the quantum dot excited state, respectively. The response was increased by a factor of 10 through efficient filling of the quantum dot energy levels by simultaneous optical pumping into the ground states and the excited states of the quantum dots.

sted, utgiver, år, opplag, sider
New York: American Institute of Physics (AIP), 2009. Vol. 94, nr 5, s. 053503-
Emneord [en]
OPTICAL pumping, OPTOELECTRONIC devices, SEMICONDUCTOR doping, QUANTUM dots, ELECTRONS, ENERGY levels (Quantum mechanics)
HSV kategori
Identifikatorer
URN: urn:nbn:se:hh:diva-3418DOI: 10.1063/1.3073048ISI: 000263167000076Scopus ID: 2-s2.0-59849125109OAI: oai:DiVA.org:hh-3418DiVA, id: diva2:295214
Tilgjengelig fra: 2010-02-17 Laget: 2009-12-01 Sist oppdatert: 2018-04-03bibliografisk kontrollert

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