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Reactive sputtering of CSx thin solid films using CS2 as precursor
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. European Spallat Source ERIC, Sweden.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0003-3277-1945
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0003-1000-0437
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2020 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 182, article id 109775Article in journal (Refereed) Published
Abstract [en]

We deposit CSx thin solid films by reactive direct current magnetron sputtering of a C target in an argon plasma, using carbon disulfide (CS2) as a precursor to film growth. We investigate the influence of the partial pressure of the CS2 vapor introduced into the plasma on the composition, the chemical bonding structure, the structural, and the mechanical properties as determined by x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, scanning electron microscopy (SEM), and nanoindentation for films deposited at 150 and 300 degrees C. The Raman and the XPS results indicate that S atoms are incorporated in mostly sp(2) bonded C network. These results agree with previous ab-initio theoretical findings obtained by modeling of the CSx compound by the Synthetic Growth Concept. The microstructure of the films as well as the results of their Raman characterization and the nano mechanical testing results all point out that with the increasing S content some spa bonding is admixed in the predominantly sp(2) bonded CSx network, leading to typical amorphous structure with short and interlocked graphene-like planes for S contents between 2% and 8%. We conclude that CSx thin solid films deposited by using CS2 as a precursor would be CSx films deposited at low temperature of similar to 150 degrees C and with an S content in the region of 6 at.% may be interesting candidates for applications as hard/elastic protective coatings.

Place, publisher, year, edition, pages
PERGAMON-ELSEVIER SCIENCE LTD , 2020. Vol. 182, article id 109775
Keywords [en]
Carbon-based nanostructured materials; Protective and hard coatings; Reactive direct current magnetron sputtering; Thin film characterization
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-171390DOI: 10.1016/j.vacuum.2020.109775ISI: 000582757100069OAI: oai:DiVA.org:liu-171390DiVA, id: diva2:1501015
Note

Funding Agencies|Swedish Government Strategic Research Area in Materials Science on Advanced Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]; Swedish Research Council (VR) through FLAG-ERA JTC 2015 project GRIFONESwedish Research Council [VR 2015-06816, VR 2017-04071]; Aforsk grant [18-266]; VRSwedish Research Council [VR 2016-05362]; Knut and Alice Wallenberg (KAW) FoundationKnut & Alice Wallenberg Foundation [KAW 2015.0043]

Available from: 2020-11-15 Created: 2020-11-15 Last updated: 2022-05-18

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Högberg, HansLai, Chung-ChuanBroitman, EstebanIvanov, Ivan GueorguievGoyenola, CeciliaNäslund, Lars-ÅkeSchmidt, SusannHultman, LarsRosén, JohannaGueorguiev, Gueorgui Kostov
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