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Toward Industrial Exploitation of THz Frequencies: Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems.ORCID iD: 0000-0002-8514-6863
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems.ORCID iD: 0000-0001-5662-6748
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2019 (English)In: IEEE Transactions on Terahertz Science and Technology, ISSN 2156-342X, E-ISSN 2156-3446, Vol. 9, no 6, p. 624-636Article in journal (Refereed) Published
Abstract [en]

A new integration concept for terahertz (THz) systems is presented in this article, wherein patterned silicon-on-insulator wafers form all DC, IF, and RF networks in a homogeneous medium, in contrast to existing solutions. Using this concept, silicon-micromachined waveguides are combined with silicon germanium (SiGe) monolithic microwave integrated circuits (MMICs) for the first time. All features of the integration platform lie in the waveguide’s H-plane. Heterogeneous integration of SiGe chips is achieved using a novel in-line H-plane transition. As an initial step toward complete systems, we outline the design, fabrication, and assembly of back-to-back transition structures, for use at D-band frequencies (110ï¿œ170 GHz). Special focus is given to the industrial compatibility of all components, fabrication, and assembly processes, with an eye on the future commercialization of THz systems. Prototype devices are assembled via two distinct processes, one of which utilizes semiautomated die-bonding tools. Positional and orientation tolerances for each process are quantified. An accuracy of $\pm \text3.5\; μ \textm$, $\pm \text1.5 °$ is achieved. Measured $S$-parameters for each device are presented. The insertion loss of a single-ended transition, largely due to MMIC substrate losses, is 4.2ï¿œ5.5 dB, with a bandwidth of 25 GHz (135ï¿œ160 GHz). Return loss is in excess of 5 dB. Measurements confirm the excellent repeatability of the fabrication and assembly processes and, thus, their suitability for use in high-volume applications. The proposed integration concept is highly scalable, permitting its usage far into the THz frequency spectrum. This article represents the first stage in the shift to highly compact, low-cost, volume-manufacturable THz waveguide systems.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2019. Vol. 9, no 6, p. 624-636
Keywords [en]
Integrated circuit packaging, micromachined waveguide, monolithic microwave integrated circuit (MMIC), silicon germanium (SiGe), terahertz (THz)
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-263604DOI: 10.1109/TTHZ.2019.2943572ISI: 000498882800014Scopus ID: 2-s2.0-85074981066OAI: oai:DiVA.org:kth-263604DiVA, id: diva2:1375981
Funder
EU, European Research Council, 644039
Note

QC 20191209

Available from: 2019-12-06 Created: 2019-12-06 Last updated: 2020-04-16Bibliographically approved

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