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SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE
Högskolan i Halmstad, Akademin för informationsteknologi, Halmstad Embedded and Intelligent Systems Research (EIS).
Högskolan i Halmstad, Akademin för informationsteknologi, Halmstad Embedded and Intelligent Systems Research (EIS), Tillämpad matematik och fysik (MPE-lab).
Acreo Swedish ICT AB, Kista, 16425, Sweden.
Acreo Swedish ICT AB, Kista, 16425, Sweden.
Vise andre og tillknytning
2018 (engelsk)Inngår i: Journal of the Korean Physical Society, ISSN 0374-4884, E-ISSN 1976-8524, Vol. 73, nr 11, s. 1604-1611Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of GaAsxSb1−x, In1−xGaxSb, and InAsxSb1−x with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from 2 ÎŒm to 12 ÎŒm in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from InAsxSb1−x and In1−xGaxSb samples even at room temperature show promising potential for IR photodetector applications. © 2018, The Author(s).

sted, utgiver, år, opplag, sider
The Korean Physical Society , 2018. Vol. 73, nr 11, s. 1604-1611
Emneord [en]
IR detector, LWIR, MWIR, Sb-based thin films, SWIR
HSV kategori
Identifikatorer
URN: urn:nbn:se:hh:diva-38696DOI: 10.3938/jkps.73.1604Scopus ID: 2-s2.0-85058784548OAI: oai:DiVA.org:hh-38696DiVA, id: diva2:1276060
Tilgjengelig fra: 2019-01-07 Laget: 2019-01-07 Sist oppdatert: 2019-01-07bibliografisk kontrollert

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