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Ultrafast terahertz field control of electronic and structural interactions in vanadium dioxide
Temple Univ, Dept Phys, Philadelphia, PA 19122 USA;SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA.
SLAC Natl Accelerator Lab, Linac Coherent Light Source, Menlo Pk, CA 94025 USA.
IBM Almaden Res Ctr, San Jose, CA 95120 USA.
IBM Almaden Res Ctr, San Jose, CA 95120 USA.
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2018 (Engelska)Ingår i: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, Vol. 98, nr 4, artikel-id 045104Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

Vanadium dioxide (VO2), an archetypal correlated-electron material, undergoes an insulator-metal transition near room temperature that exhibits electron-correlation-driven and structurally driven physics. Using ultrafast temperature- and fluence-dependent optical spectroscopy and x-ray scattering, we show that multiple interrelated electronic and structural processes in the nonequilibrium dynamics in VO2 can be disentangled in the time domain. Specifically, following intense subpicosecond terahertz (THz) electric-field excitation, a partial collapse of the insulating gap occurs within the first picosecond. At temperatures sufficiently close to the transition temperature and for THz peak fields above a threshold of approximately 1 MV/cm, this electronic reconfiguration initiates a change in lattice symmetry taking place on a slower timescale. We identify the kinetic energy increase of electrons tunneling in the strong electric field as the driving force, illustrating a promising method to control electronic and structural interactions in correlated materials on an ultrafast timescale.

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AMER PHYSICAL SOC , 2018. Vol. 98, nr 4, artikel-id 045104
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URN: urn:nbn:se:uu:diva-360193DOI: 10.1103/PhysRevB.98.045104ISI: 000436939100003OAI: oai:DiVA.org:uu-360193DiVA, id: diva2:1247056
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Knut och Alice Wallenbergs StiftelseTillgänglig från: 2018-09-11 Skapad: 2018-09-11 Senast uppdaterad: 2018-09-11Bibliografiskt granskad

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