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InP/InAsP Nanowire-Based Spatially Separate Absorption and Multiplication Avalanche Photodetectors
Högskolan i Halmstad, Akademin för informationsteknologi, Halmstad Embedded and Intelligent Systems Research (EIS), Tillämpad matematik och fysik (MPE-lab). Solid State Physics and NanoLund, Lund University, Lund, Sweden. (Nanovetenskap)ORCID-id: 0000-0001-5993-8106
Solid State Physics and NanoLund, Lund University, Lund, Sweden. (Nanometerkonsortiet)
Solid State Physics and NanoLund, Lund University, Lund, Sweden. (Nanometerkonsortiet)
Solid State Physics and NanoLund, Lund University, Lund, Sweden. (Nanometerkonsortiet)
Vise andre og tillknytning
2017 (engelsk)Inngår i: ACS Photonics, E-ISSN 2330-4022, Vol. 4, nr 11, s. 2693-2698Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication region is implemented in a large band gap material is desired to avoid detrimental Zener tunneling leakage currents, a concern otherwise in smaller band gap materials required for absorption at 1.3/1.55 μm. Self-assembled III-V semiconductor nanowires offer key advantages such as enhanced absorption due to optical resonance effects, strain-relaxed heterostructures, and compatibility with mainstream silicon technology. Here, we present electrical and optical characteristics of single InP and InP/InAsP nanowire APD structures. Temperature-dependent breakdown characteristics of p+-n-n+ InP nanowire devices were investigated first. A clear trap-induced shift in breakdown voltage was inferred from I-V measurements. An improved contact formation to the p+-InP segment was observed upon annealing, and its effect on breakdown characteristics was investigated. The band gap in the absorption region was subsequently varied from pure InP to InAsP to realize spatially separate absorption and multiplication APDs in heterostructure nanowires. In contrast to the homojunction APDs, no trap-induced shifts were observed for the heterostructure APDs. A gain of 12 was demonstrated for selective optical excitation of the InAsP segment. Additional electron-beam-induced current measurements were carried out to investigate the effect of local excitation along the nanowire on the I-V characteristics. Simulated band profiles and electric field distributions support our interpretation of the experiments. Our results provide important insight for optimization of avalanche photodetector devices based on III-V nanowires. © 2017 American Chemical Society

sted, utgiver, år, opplag, sider
Washington: American Chemical Society (ACS), 2017. Vol. 4, nr 11, s. 2693-2698
Emneord [en]
avalanche photodetectors, nanowires, punch-through, SAM APDs
HSV kategori
Identifikatorer
URN: urn:nbn:se:hh:diva-36687DOI: 10.1021/acsphotonics.7b00389ISI: 000415786300010Scopus ID: 2-s2.0-85034033359OAI: oai:DiVA.org:hh-36687DiVA, id: diva2:1201837
Forskningsfinansiär
Swedish Energy AgencyCarl Tryggers foundation Swedish Research CouncilSwedish Foundation for Strategic Research
Merknad

The authors acknowledge financial support from NanoLund, the Swedish Research Council, the Swedish National Board for Industrial and Technological Development, the Swedish Foundation for Strategic Research, the Ljungberg Foundation, the Carl Trygger Foundation, and the Swedish Energy Agency. This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement No. 641023 (NanoTandem) and under the Marie Sklodowska-Curie grant agreement No. 656208.

Tilgjengelig fra: 2018-04-26 Laget: 2018-04-26 Sist oppdatert: 2018-06-14bibliografisk kontrollert

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