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Exploring the selectivity of WO3 with iridium catalyst in an ethanol/naphthalene mixture using multivariate statistics
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska fakulteten. University of Saarland, Germany.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska fakulteten.
University of Oulu, Finland.
University of Saarland, Germany.
Vise andre og tillknytning
2016 (engelsk)Inngår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 618, s. 263-270Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Temperature cycled operation and multivariate statistics have been used to compare the selectivity of two gate (i.e. sensitive) materials for gas-sensitive, silicon carbide based field effect transistors towards naphthalene and ethanol in different mixtures of the two substances. Both gates have a silicon dioxide (SiO2) insulation layer and a porous iridium (Ir) electrode. One of it has also a dense tungsten trioxide (WO3) interlayer between Ir and SiO2. Both static and transient characteristics play an important role and can contribute to improve the sensitivity and selectivity of the gas sensor. The Ir/SiO2 is strongly influenced by changes in ethanol concentration, and is, thus, able to quantify ethanol in a range between 0 and 5 ppm with a precision of 500 ppb, independently of the naphthalene concentrations applied in this investigation. On the other hand, this sensitivity to ethanol reduces its selectivity towards naphthalene, whereas Ir/WO3/SiO2 shows an almost binary response to ethanol. Hence, the latter has a better selectivity towards naphthalene and can quantify legally relevant concentrations down to 5 ppb with a precision of 2.5 ppb, independently of a changing ethanol background between 0 and 5 ppm. (C) 2016 Elsevier B.V. All rights reserved.

sted, utgiver, år, opplag, sider
ELSEVIER SCIENCE SA , 2016. Vol. 618, s. 263-270
Emneord [en]
Metal oxide; Pulsed laser deposition; Silicon carbide field-effect transistor; SiC-FET; Gas sensor; Temperature cycled operation; Volatile organic compounds; Quantification
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-133530DOI: 10.1016/j.tsf.2016.08.002ISI: 000389164400006OAI: oai:DiVA.org:liu-133530DiVA, id: diva2:1060868
Konferanse
9th International Workshop on Semiconductor Gas Sensors (SGS)
Tilgjengelig fra: 2016-12-30 Laget: 2016-12-29 Sist oppdatert: 2017-11-29

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