Ändra sökning
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Recombination in ingot cast siliconsolar cells
Fraunhofer ISE, Laboratory and Servicecenter, Auf der Reihe 2, 45884 Gelsenkirchen, Germany.ORCID-id: 0000-0003-2181-3820
Fraunhofer ISE, Laboratory and Servicecenter, Auf der Reihe 2, 45884 Gelsenkirchen, Germany.
Fraunhofer ISE, Laboratory and Servicecenter, Auf der Reihe 2, 45884 Gelsenkirchen, Germany.
Fraunhofer ISE, Laboratory and Servicecenter, Auf der Reihe 2, 45884 Gelsenkirchen, Germany.
Visa övriga samt affilieringar
2011 (Engelska)Ingår i: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 208, nr 4, s. 760-768Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

Minority carrier recombination is studied in multicrystalline ingot cast silicon solar cells. The normalized recombination strength G of dislocations is obtained by correlating topogramsof the internal quantum efficiency (IQE) with those of the dislocation densityr.G is obtained by fitting an extended theory of Donolato to the experimental data. The measured G-values vary significantly between adjacent dislocation clusters and correlate with the spatial pattern of the dislocations. All G-values are strongly dependent on the parameters of the solar cell process. The influence of phosphorus diffusion and hydrogenation is shown. After solidification of the silicon, impurities from the crucible enter the ingot and deteriorate its border regions during cooling to room temperature. These deteriorated border regions can be significantly improved byan additional low temperature anneal that is applied after phosphorus diffusion. The experiments indicate that the mechanism of the anneal is external phosphorus gettering into the emitter.

Ort, förlag, år, upplaga, sidor
2011. Vol. 208, nr 4, s. 760-768
Nyckelord [en]
silicon defect dislocation precipitate gettering solar cell
Nationell ämneskategori
Den kondenserade materiens fysik
Forskningsämne
Fysik
Identifikatorer
URN: urn:nbn:se:kau:diva-27899DOI: 10.1002/pssa.201084022ISI: 000289513700003OAI: oai:DiVA.org:kau-27899DiVA, id: diva2:628889
Tillgänglig från: 2013-06-14 Skapad: 2013-06-14 Senast uppdaterad: 2017-12-06Bibliografiskt granskad

Open Access i DiVA

Fulltext saknas i DiVA

Övriga länkar

Förlagets fulltext

Sök vidare i DiVA

Av författaren/redaktören
Rinio, Markus
I samma tidskrift
Physica Status Solidi (a) applications and materials science
Den kondenserade materiens fysik

Sök vidare utanför DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetricpoäng

doi
urn-nbn
Totalt: 149 träffar
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf