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RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon-carbide synthesis study
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.ORCID-id: 0000-0002-8760-1137
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2006 (Engelska)Ingår i: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 249, s. 859-864Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

For ion beam synthesis of silicon carbide (SiC), a knowledge of the depth distribution of implanted carbon ions in silicon is crucial for successful development. Based on its simplicity and availability, we selected Rutherford backscattering spectrometry (RBS) as an analysis technique for this purpose. A self-developed computer program dedicated to extract depth profiles of lighter impurities in heavier matrix is established. For control, calculated results are compared with an other ion beam analysis (IBA) technique superior for studying lighter impurity in heavier substrate i.e. elastic recoil detection analysis (ERDA). The RBS was performed with a 1.7-MV Tandetron accelerator using He2+ as the probe ions. The ERDA was performed with a 5-MV Pelletron accelerator using I8+ as the probe ions. This work shows that the RBS-extracted data had no significant deviations from those of ERDA and simulations by SRIM2003 and SIMPL computer codes. We also found that annealing at temperatures as high as 1000 degrees C had quite limited effect on the redistribution of carbon in silicon.

Ort, förlag, år, upplaga, sidor
2006. Vol. 249, s. 859-864
Nyckelord [en]
silicon, silicon carbide (SiC), dose, depth profile, Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), beam synthesis
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URN: urn:nbn:se:kth:diva-15902DOI: 10.1016/j.nimb.2006.03.182ISI: 000239545000208Scopus ID: 2-s2.0-33745966076OAI: oai:DiVA.org:kth-15902DiVA, id: diva2:333944
Anmärkning
QC 20100525. Conference: 17th International Conference on Ion Beam Analysis. Seville, SPAIN. JUN 26-JUL 01, 2005 Tillgänglig från: 2010-08-05 Skapad: 2010-08-05 Senast uppdaterad: 2017-12-12Bibliografiskt granskad

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Hallén, Anders.
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Mikroelektronik och Informationsteknik, IMIT
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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