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Surface Modification And Secondary Phase Formation From a High Dose KF-Post Deposition Treatment of (Ag,Cu)(In,Ga)Se2 Solar Cell Absorbers
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.ORCID-id: 0000-0002-2101-3746
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.ORCID-id: 0000-0002-3162-4292
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik. Solibro Research AB.
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(Engelska)Ingår i: Progress in Photovoltaics, ISSN 1062-7995, E-ISSN 1099-159XArtikel i tidskrift (Refereegranskat) Submitted
Abstract [en]

In this study we assessed the potential of KF-Post Deposition Treatment (PDT) performed on a silver-alloyed Cu(Inx,Ga1-x)Se2 (ACIGS) solar absorber. ACIGS absorbers with Ag/Ag+Cu ratio (Ag/I) close to 20% were co-evaporated on a Mo-coated glass substrate and exposed to in-situ KF-PDT of various intensities. The current-voltage characteristics indicated that an optimized PDT can be beneficial, increasing in our study the median Voc and efficiency values by +48 mV and +0.9 %abs (from 728 mV and 16.1 % efficiency measured for the sample without PDT), respectively. However, an increased KF-flux during PDT resulted in a net deterioration of the performance leading to median Voc and efficiency values as low as 503 mV and 4.7 %. The chemical composition analysis showed that while the reference absorber without any PDT was homogeneous, the KF-PDT induced a clear change within the first 10 nm from the surface. Here, the surface layer composition was richer in K and In with an increased Ag/I ratio, and its thickness seemed to follow the KF exposure intensity. Additionally, high-dose KF-PDT resulted in substantial formation of secondary phases for the ACIGS. The secondary phase precipitates were also richer in Ag, K and In, and Electron and X-ray diffraction data match with the monoclinic C 1 2/c 1 space group adopted by the Ag-alloyed KInSe2 (AKIS) phase. It could not be concluded whether the performance loss for the solar cell devices originated from the thicker surface layer or the presence of secondary phases, or both for the high-dose KF-PDT sample.

Nyckelord [en]
TEM, EDS, ACIGS, XPS, KF-PDT, KInSe
Nationell ämneskategori
Energisystem Elektroteknik och elektronik
Identifikatorer
URN: urn:nbn:se:uu:diva-357122OAI: oai:DiVA.org:uu-357122DiVA, id: diva2:1238096
Tillgänglig från: 2018-08-12 Skapad: 2018-08-12 Senast uppdaterad: 2018-08-13Bibliografiskt granskad
Ingår i avhandling
1. The Multiple Faces of Interfaces: Electron microscopy analysis of CuInSe2 thin-film solar cells
Öppna denna publikation i ny flik eller fönster >>The Multiple Faces of Interfaces: Electron microscopy analysis of CuInSe2 thin-film solar cells
2018 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

The CIS solar cell family features both a high stability and world-class performances. They can be deposited on a wide variety of substrates and absorb the entire solar spectrum only using a thickness of a few micrometers. These particularities allow them to feature the most positive Energy returned on energy invested (EROI) values and the shortest Energy payback times (EPBT) of all the main photovoltaic solar cells. Using mainly electron microscopy characterization techniques, this thesis has explored the questions related to the interface control in thin-film photovoltaic solar cells based on CuInSe2 (CIS) absorber materials. Indeed, a better understanding of the interfaces is essential to further improve the solar cell conversion efficiency (currently around 23%), but also to introduce alternative substrates, to implement various alloying (Ga-CIS (CIGS), Ag-CIGS (ACIGS)…) or even to assess alternative buffer layers.

The thread of this work is the understanding and the improvement of the interface control. To do so, the passivation potential of Al2O3 interlayers has been studied in one part of the thesis. While positive changes were generally measured, a subsequent analysis has revealed that a detrimental interaction could occur between the NaF precursor layer and the rear Al2O3 passivation layer. Still within the passivation research field, incorporation of various alkali-metals to the CIS absorber layer has been developed and analyzed. Large beneficial effects were ordinarily reported. However, similar KF-post deposition treatments were shown to be potentially detrimental for the silver-alloyed CIGS absorber layer. Finally, part of this work dealt with the limitations of the thin-barrier layers usually employed when using steel substrates instead of soda-lime glass ones. The defects and their origin could have been related to the steel manufacturing process, which offered solutions to erase them.

Electron microscopy, especially Transmission electron microscopy (TEM), was essential to scrutinize the local changes occurring at the different interfaces within a few nanometers. The composition variation was measured with both Electron energy loss spectroscopy (EELS) and Energy dispersive X-ray spectroscopy (EDS) techniques. Finally, efforts have been invested in controlling and improving the FIB sample preparation, which was required for the TEM observations in our case.

Ort, förlag, år, upplaga, sidor
Uppsala: Acta Universitatis Upsaliensis, 2018. s. 85
Serie
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 1701
Nyckelord
Electron microscopy, TEM, STEM, EELS, EDS, solar cells, CIGS, ACIGS, CZTS, post deposition treatment, KF, RbF, buffer layers, interfaces, inter layers, barrier layers, passivation layers
Nationell ämneskategori
Energisystem Annan elektroteknik och elektronik Annan materialteknik
Forskningsämne
Teknisk fysik med inriktning mot materialvetenskap; Teknisk fysik med inriktning mot elektronik
Identifikatorer
urn:nbn:se:uu:diva-357127 (URN)978-91-513-0402-1 (ISBN)
Disputation
2018-09-28, Polhemssalen, The Angstrom laboratory, Lägerhyddsvägen 1, Uppsala, 09:30 (Engelska)
Opponent
Handledare
Tillgänglig från: 2018-09-07 Skapad: 2018-08-12 Senast uppdaterad: 2018-10-02

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Donzel-Gargand, OlivierLarsson, FredrikTörndahl, TobiasStolt, LarsEdoff, Marika
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Fasta tillståndets elektronik
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Progress in Photovoltaics
EnergisystemElektroteknik och elektronik

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