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2012 (engelsk)Inngår i: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 45, nr 42, s. 422001-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]
Reactive magnetron sputtering was used to deposit YxAl1-xN thin films, 0≤x≤0.22, onto Al2O3(0001) and Si(100) substrates. X-ray diffraction and analytical electron microscopy show that the films are solid solutions. Lattice constants are increasing with Y concentration, in agreement with ab initio calculations. Spectroscopic ellipsometry measurements reveal a band gap decrease from 6.2 eV (x=0) down to 4.9 eV (x=0.22). Theoretical investigations within the special quasirandom structure approach show that the wurtzite structure has the lowest mixingenthalpy for 0≤x≤0.75.
sted, utgiver, år, opplag, sider
Institute of Physics Publishing (IOPP), 2012
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-76472 (URN)10.1088/0022-3727/45/42/422001 (DOI)000309766700001 ()
Merknad
funding agencies|Linkoping Linnaeus Initiative on Nanoscale Functional Materials (LiLiNFM)||Swedish Research Council (VR)|349-2008-6582|FCT Portugal|SFRH/BPD/66818/2009|VR|2010-3848|Swedish Governmental Agency for Innovation Systems (VINNOVA)|2011-03486|
2012-04-102012-04-102023-12-28bibliografisk kontrollert