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Electrical and Optical Characterization of InP Nanowire Ensemble Photodetectors
Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE).
Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE).
2012 (engelsk)Independent thesis Advanced level (degree of Master (One Year)), 10 poäng / 15 hpOppgave
Abstract [en]

Photodetectors are semiconductor devices that can convert optical signals into electrical signals. There is a wide range of photodetector applications such as fiber optics communication, infrared heat camera sensors, as well as in equipment used for medical and military purposes.

Nanowires are thin needle-shaped structures made of semiconductor materials, e.g. gallium arsenide (GaAs), indium phosphide (InP) or silicon (Si). Their small size, well-controlled crystal structure and composition as well as the possibility to fabricate them monolithically on silicon make them ideally suited for sensitive photodetectors with low noise.

In this project, Fourier Transform Infrared (FTIR) Spectroscopy is used to investigate the optical characteristics of InP nanowire-based PIN photodetectors. The corresponding electrical characteristics are also measured using very sensitive instrumentation. A total of 4 samples consisting of processed nanowires with 80 nm diameter but different density and length have been examined. The experiments were conducted from 78K (-196oC) to room temperature 300K (27oC). The spectrally resolved photocurrent and current-voltage (IV) curves (in darkness & under illumination) for different temperatures have been studied and analyzed.

The samples show excellent IV performance with very low leakage currents. The photocurrent scales with the number of nanowires, from which we conclude that most photocurrent is generated in the substrate. Spectrally resolved photocurrent data, recorded at different temperatures, display strong absorption in the near-infrared region with interesting peaks that reveal the underlying optical processes in the substrate and nanowires, respectively. The nature of the absorption peaks is discussed in detail.

This study is an important step towards integration of optically efficient III-V nanoscale devices on cheap silicon substrates for applications e.g. on-chip optical communication and solar cells for energy harvesting.

sted, utgiver, år, opplag, sider
2012. , s. 51
Emneord [en]
InP, Nanowire, Wurtzite, Zincblende, Photodetector, Semiconductor
HSV kategori
Identifikatorer
URN: urn:nbn:se:hh:diva-17457Lokal ID: IDE1145OAI: oai:DiVA.org:hh-17457DiVA, id: diva2:513953
Presentation
2011-06-20, Room 201 E-building, Box 823, S-301 18, Halmstad, Sweden, 14:00 (engelsk)
Uppsök
Physics, Chemistry, Mathematics
Veileder
Examiner
Tilgjengelig fra: 2012-04-04 Laget: 2012-04-04 Sist oppdatert: 2012-04-04bibliografisk kontrollert

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