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Enhanced n-type dopant solubility in tensile-strained Si
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.ORCID-id: 0000-0002-5332-1874
Vise andre og tillknytning
2008 (engelsk)Inngår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 517, nr 1, s. 331-333Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The creation of highly conductive ultrashallow-doped regions in strained Si is a key requirement for future Si based devices. It is shown that in the presence of tensile strain, Sb becomes a contender to replace As in strain-engineered CMOS devices due to advantages in sheet resistance. While strain reduces resistance for both As and Sb; a result of enhanced electron mobility, the reduction is significantly larger for Sb due to an increase in donor activation. Differential Hall measurements suggest this is a consequence of a strain-induced Sb solubility enhancement following solid-phase epitaxial regrowth, increasing Sb solubility in Si to levels approaching 10(21) cm(-3). Experiments highlight the importance of maintaining substrate strain during thermal annealing to maintain this high Sb activation.

sted, utgiver, år, opplag, sider
2008. Vol. 517, nr 1, s. 331-333
Emneord [en]
Antimony, Arsenic, Hall effect, Stress, Ion Implantation, Solid phase, epitaxy, implanted silicon, junctions, sb
Identifikatorer
URN: urn:nbn:se:kth:diva-18037DOI: 10.1016/j.tsf.2008.08.072ISI: 000261510700095Scopus ID: 2-s2.0-54949158424OAI: oai:DiVA.org:kth-18037DiVA, id: diva2:336083
Merknad
QC 20100525Tilgjengelig fra: 2010-08-05 Laget: 2010-08-05 Sist oppdatert: 2024-01-08bibliografisk kontrollert

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