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Simulation-driven development of a novel SiC embedded power module design concept
RISE - Research Institutes of Sweden, ICT, Acreo.
ON Semiconductor Gmhb, Germany; Fairchild Semiconductor Gmhb, Germany.
ON Semiconductor Gmhb, Germany; Fairchild Semiconductor Gmhb, Germany.
AT & S Austria Technologie & Systemtechnik, Austria.
Vise andre og tillknytning
2017 (engelsk)Inngår i: 2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2017, 2017Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

Silicon carbide embedded power modules enable a compact and cost competitive packaging solution for high-switching frequency and high-temperature operation applications. Power module packaging technologies span several engineering domains. At the early design stage, simulation-driven development is necessary to shorten the design period and reduce the design cost. This paper presents a novel design concept of a three-phase embedded power module (1200 V, 20 A, 55 mm × 36 mm × 0.808 mm) including silicon carbide metal-oxide-semiconductor field-effect transistor and antiparallel diode dies. Based on the E/CAD design data different layer built-up designs have been tested against thermal, mechanical, and electrical behavior. The obtained simulation data then have been evaluated against a commercial available power module (Motion Smart Power Module SMP33) which utilizes over mold direct bonded copper substrates with soldered semiconductor dies and bond wire contacts. Compared to the conventional module, the loop conductive interconnection parasitic inductance and resistance of the design concept (Vdc+ to Vdc-) reduces approximately by 88 % and 72 %, respectively. The average junction to case thermal resistance has been improved by approximately more than 10 % even though the total package size reduces by approximately 88 %. Furthermore, the contours of deformation and stresses have been investigated for the design concept in the thermomechanical simulation.

sted, utgiver, år, opplag, sider
2017.
Emneord [en]
Carbide dies, Chip scale packages, Field effect transistors, High temperature applications, High temperature operations, Metals, Microelectronics, Microsystems, MOS devices, MOSFET devices, Oxide semiconductors, Semiconducting silicon, Silicon carbide, Substrates, Wide band gap semiconductors, Anti-parallel diodes, Deformation and stress, Direct bonded coppers, Early design stages, Electrical behaviors, High switching frequencies, Parasitic inductances, Thermomechanical simulation, Electric power systems
HSV kategori
Identifikatorer
URN: urn:nbn:se:ri:diva-30926DOI: 10.1109/EuroSimE.2017.7926252Scopus ID: 2-s2.0-85020187958ISBN: 9781509043446 (tryckt)OAI: oai:DiVA.org:ri-30926DiVA, id: diva2:1139243
Konferanse
18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2017, 3 April 2017 through 5 April 2017. Dresden, Germany.
Tilgjengelig fra: 2017-09-07 Laget: 2017-09-07 Sist oppdatert: 2019-02-04bibliografisk kontrollert

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Totalt: 26 treff
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