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Observation of vacancy clusters in HTCVD grown SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2005 (English)In: Materials Science Forum, Vols. 483-485, 2005, Vol. 483, 469-472 p.Conference paper, Published paper (Refereed)
Abstract [en]

Positron lifetime spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapor deposition (HTCVD). The measured positron lifetime spectra can be decomposed into two components, of which the longer corresponds to vacancy clusters. We have carried out atomic superposition calculations to estimate the size of these clusters.

Place, publisher, year, edition, pages
2005. Vol. 483, 469-472 p.
Keyword [en]
SiC, HTCVD, positron, vacancy cluster, atomic superposition
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48228OAI: oai:DiVA.org:liu-48228DiVA: diva2:269124
Conference
ECSCRM2004
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-13

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